2N5871

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5871 2N5872 DESCRIPTION ・With TO-3 package ・Low collector saturation voltage APPLICATIONS ・For medium-speed switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N5871 VCBO Collector-base voltage 2N5872 2N5871 VCEO Collector-emitter voltage 2N5872 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -80 -5 -7 115 150 -65~200 V A W ℃ ℃ Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5871 2N5872 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5871 VCEO(SUS) Collector-emitter sustaining voltage 2N5872 VCEsat VBEsat ICBO Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current 2N5871 ICEO Collector cut-off current 2N5872 IEBO hFE fT Emitter cut-off current DC current gain Trainsistion frequency VCE=-40V; IB=0 VEB=-5V; IC=0 IC=-2.5A ; VCE=-4V IC=-0.5A ; VCE=-10V 20 4 -1.0 100 MHz mA IC=-5A;IB=-0.5A IC=-5A; IB=-0.5A VCB=ratedVCBO; IB=0 VCE=-30V; IB=0 -2.0 mA IC=-0.1A ;IB=0 -80 -1.0 -1.5 -1.0 V V mA CONDITIONS MIN -60 V TYP. MAX UNIT 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N5871 2N5872 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3