2N5877

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5875 2N5876 APPLICATIONS ・For general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5877 2N5878 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N5877 VCBO Collector-base voltage 2N5878 2N5877 VCEO Collector-emitter voltage 2N5878 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 80 5 10 20 4 150 200 -65~200 V A A A W ℃ ℃ Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5877 2N5878 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5877 VCEO(SUS) Collector-emitter sustaining voltage 2N5878 VCEsat-1 VCEsat-2 VBEsat VBE ICBO Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current 2N5877 ICEO Collector cut-off current 2N5878 ICEX IEBO hFE-1 hFE-2 hFE-3 fT Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Trainsistion frequency VCE=40V; IB=0 VCE=ratedVCE; VBE=1.5V TC=150℃ VEB=5V; IC=0 IC=1A ; VCE=4V IC=4A ; VCE=4V IC=10A ; VCE=4V IC=0.5A ; VCE=10V;f=1MHz 35 20 4 4 MHz 100 0.5 5.0 1.0 mA mA IC=5A;IB=0.5A IC=10A;IB=2.5A IC=10A;IB=2.5A IC=4A ; VCE=4V VCB=ratedVCBO; IB=0 VCE=30V; IB=0 1.0 mA IC=0.2A ;IB=0 80 1.0 3.0 2.5 1.5 0.5 V V V V mA CONDITIONS MIN 60 V TYP. MAX UNIT 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5877 2N5878 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3