2N5880

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5881 2N5882 APPLICATIONS ・For general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5879 2N5880 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N5879 VCBO Collector-base voltage 2N5880 2N5879 VCEO Collector-emitter voltage 2N5880 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -80 -5 -15 -30 -5 160 150 -65~200 V A A A W ℃ ℃ Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.1 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5879 2N5880 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5879 VCEO(SUS) Collector-emitter sustaining voltage 2N5880 VCEsat-1 VCEsat-2 VBEsat VBE ICBO Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current 2N5879 ICEO Collector cut-off current 2N5880 ICEX IEBO hFE-1 hFE-2 hFE-3 fT Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Trainsistion frequency VCE=-40V; IB=0 VCE=ratedVCE; VBE=-1.5V TC=150℃ VEB=-5V; IC=0 IC=-2A ; VCE=-4V IC=-6A ; VCE=-4V IC=-15A ; VCE=-4V IC=-1A ; VCE=-10V 35 20 4 4 MHz 100 -0.5 -5.0 -1.0 mA mA IC=-7A;IB=-0.7A IC=-15A;IB=-3.75A IC=-15A;IB=-3.75A IC=-6A ; VCE=-4V VCB=ratedVCBO; IB=0 VCE=-30V; IB=0 -1.0 mA IC=-0.2A ;IB=0 -80 -1.0 -4.0 -2.5 -1.5 -0.5 V V V V mA CONDITIONS MIN -60 V TYP. MAX UNIT 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N5879 2N5880 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3