2N5882

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5879 2N5880 APPLICATIONS ・For general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5881 2N5882 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N5881 VCBO Collector-base voltage 2N5882 2N5881 VCEO Collector-emitter voltage 2N5882 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 80 5 15 30 5 160 150 -65~200 V A A A W ℃ ℃ Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.1 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5881 2N5882 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5881 IC=0.2A ;IB=0 2N5882 IC=7A;IB=0.7A IC=15A;IB=3.75A IC=15A;IB=3.75A IC=6A ; VCE=4V VCB=ratedVCBO; IB=0 2N5881 ICEO Collector cut-off current 2N5882 ICEX IEBO hFE-1 hFE-2 hFE-3 fT Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Trainsistion frequency VCE=40V; IB=0 VCE=ratedVCE; VBE=1.5V TC=150℃ VEB=5V; IC=0 IC=2A ; VCE=4V IC=6A ; VCE=4V IC=15A ; VCE=4V IC=1A ; VCE=10V 35 20 4 4 MHz 100 0.5 5.0 1.0 mA mA VCE=30V; IB=0 1.0 mA 80 1.0 4.0 2.5 1.5 0.5 V V V V mA CONDITIONS MIN 60 V TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage VCEsat-1 VCEsat-2 VBEsat VBE ICBO Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5881 2N5882 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3