2N5883

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5883 2N5884 DESCRIPTION ・With TO-3 package ・Complement to type 2N5885 2N5886 ・High power dissipations APPLICATIONS ・They are intended for use in power linear and switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N5883 VCBO Collector-base voltage 2N5884 2N5883 VCEO Collector-emitter voltage 2N5884 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -80 -5 -25 -50 -7.5 200 200 -65~200 V A A A W ℃ ℃ Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5883 2N5884 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5883 IC=-0.2A ;IB=0 2N5884 IC=-15A; IB=-1.5A IC=-25A ;IB=-6.25A IC=-25A ;IB=-6.25A IC=-10A ; VCE=-4V VCB=ratedVCBO; IB=0 2N5883 ICEO Collector cut-off current 2N5884 VCE=-40V; IB=0 VCE=ratedVCEO; VCE=ratedVCEO; TC=150℃ VEB=-5V; IC=0 IC=-3A ; VCE=-V IC=-10A ; VCE=-4V IC=-25A ; VCE=-4V IC=-1A ; VCE=-10V;f=1MHz IE=0; VCB=-10V;f=1MHz 35 20 4 4 500 MHz pF 100 -1 mA -10 -1 mA VCE=-30V; IB=0 -2 mA -80 -1 -4 -2.5 -1.5 -1 V V V V mA CONDITIONS MIN -60 V TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage VCEsat-1 VCEsat-2 VBEsat VBE ICBO Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current ICEV Collector cut-off current (VBE(off)=1.5V) IEBO hFE-1 hFE-2 hFE-3 fT Ccb Emitter cut-off current DC current gain DC current gain DC current gain Trainsistion frequency Collector base capacitance Switching times tr ts tf Rise time Storage time Fall time IC=-10A ;IB1=- IB2=-1A VCC=-30V 0.7 1.0 0.8 μs μs μs 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N5883 2N5884 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3