2N5886

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain: hFE= 20(Min)@IC= 10A ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 15A ·Complement to Type 2N5883/5884 APPLICATIONS ·Designed for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER 2N5885 VCBO Collector-Base Voltage 2N5886 2N5885 VCEO Collector-Emitter Voltage 2N5886 VEBO IC ICM IB PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature 80 5 25 50 7.5 200 200 -65~200 V A A A W ℃ ℃ 80 60 V VALUE 60 V UNIT 2N5885/5886 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 0.875 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER 2N5885 IC= 200mA ; IB= 0 2N5886 IC= 15A; IB= 1.5A IC= 25A; IB= 6.25A IC= 25A; IB= 6.25A IC= 10A ; VCE= 4V 2N5885 2N5886 2N5885 2N5886 2N5885 2N5886 VCE= 30V; IB= 0 VCE= 40V; IB= 0 VCE= 60V; VBE(off)= 1.5V VCE= 60V; VBE(off)= 1.5V,TC=150℃ VCE= 80V; VBE(off)= 1.5V VCE= 80V; VBE(off)= 1.5V,TC=150℃ VCB= 60V; IE= 0 VCB= 80V; IE= 0 VEB= 5V; IC=0 IC= 3A ; VCE= 4V IC= 10A ; VCE= 4V IC= 25A ; VCE= 4V IE= 0;VCB= 10V;ftest= 1MHz IC= 1A ; VCE= 10V ;ftest= 1MHz CONDITIONS 2N5885/5886 MIN 60 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V 80 1.0 4.0 2.5 1.5 2.0 mA 2.0 1.0 10 1.0 10 1.0 mA 1.0 1.0 35 20 4 500 4 pF MHz 100 mA V V V V VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE(on) Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage ICEO Collector Cutoff Current ICEX Collector Cutoff Current mA ICBO Collector Cutoff Current IEBO hFE-1 hFE-2 hFE-3 COB fT Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Output Capacitance Current-Gain—Bandwidth Product Switching Times tr tstg tf Rise Time Storage Time Fall Time IC= 10A; IB1= -IB2= 1A;VCC= 30V 0.7 1.0 0.8 μs μs μs isc Website：www.iscsemi.cn 2