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2N5991

2N5991

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2N5991 - Silicon NPN Power Transistors - Inchange Semiconductor Company Limited

  • 数据手册
  • 价格&库存
2N5991 数据手册
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2N5986/5987/5988 ・Low collector saturation voltage APPLICATIONS ・Designed for use in general purpose power amplifier and switching circuits. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2N5989 2N5990 2N5991 Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N5989 VCBO Collector-base voltage 2N5990 2N5991 2N5989 VCEO Collector-emitter voltage 2N5990 2N5991 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 60 80 100 40 60 80 5 12 20 4 100 150 -65~150 V A A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.25 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5989 VCEO(SUS) Collector-emitter sustaining voltage 2N5990 2N5991 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N5989 ICEO Collector cut-off current 2N5990 2N5991 ICEX IEBO hFE-1 hFE-2 hFE-3 COB fT Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency IC=6A ;IB=0.6A IC=12A; IB=1.8A IC=12A; IB=1.8A IC=6A ; VCE=2V VCE=20V; IB=0 VCE=30V; IB=0 VCE=40V; IB=0 IC=0.2A ;IB=0 2N5989 2N5990 2N5991 CONDITIONS MIN 40 60 80 TYP. MAX UNIT V 0.6 1.7 2.5 1.4 V V V V 2.0 mA VCE=RatedVCE;VBE=-1.5V TC=125℃ VEB=5V; IC=0 IC=1.5A ; VCE=2V IC=6A ; VCE=2V IC=12A ; VCE=2V IE=0 ; VCB=10V;f=1MHz IC=0.5A ; VCE=10V;f=1MHz 2.0 40 20 7.0 0.2 2.0 1.0 mA mA 120 300 pF MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5989 2N5990 2N5991 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3
2N5991 价格&库存

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