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2N6031

2N6031

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2N6031 - Silicon PNP Power Transistors - Inchange Semiconductor Company Limited

  • 数据手册
  • 价格&库存
2N6031 数据手册
Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5631 ・High collector sustaining voltage ・High DC current gain ・Low collector saturation voltage APPLICATIONS ・For high power audio amplifier and high voltage switching regulator circuits applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6031 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -140 -140 -7 -16 -20 -5.0 200 150 -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N6031 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ;IB=0 -140 V VCEsat-1 VCEsat-2 Collector-emitter saturation voltage IC=-10A; IB=-1A IC=-16A ;IB=-4A -1.0 V Collector-emitter saturation voltage -2.0 V VBEsat Base-emitter saturation voltage IC=-10A; IB=-1A -1.8 V VBE Base-emitter on voltage IC=-8A ; VCE=-2V -1.5 V ICBO Collector cut-off current VCB=ratedVCBO; IE=0 -2.0 mA ICEO Collector cut-off current VCE=-70V; IB=0 -2.0 mA VCE=ratedVCB ICEX Collector cut-off current (VBE(off)=1.5V) VCE=ratedVCB; TC=150℃ -2.0 mA -7.0 IEBO Emitter cut-off current VEB=-7V; IC=0 -5.0 mA hFE-1 DC current gain IC=-8A ; VCE=-2V 15 60 hFE-2 DC current gain IC=-16A ; VCE=-2V 4 COB Output capacitance IE=0 ; VCB=-10V ;f=0.1MHz 1000 pF fT Transition frequency IC=-1A ; VCE=-20V ;f=0.5MHz 1.0 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6031 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3
2N6031 价格&库存

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