2N6039

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-126 package ・Complement to type 2N6034/6035/6036 ・DARLINGTON ・High DC current gain APPLICATIONS ・Designed for general-purpose amplifier and low-speed switching applications PINNING(see Fig.2) PIN 1 2 3 DESCRIPTION Emitter Collector Base 2N6037 2N6038 2N6039 Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N6037 VCBO Collector-base voltage 2N6038 2N6039 2N6037 VCEO Collector-emitter voltage 2N6038 2N6039 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 40 60 80 40 60 80 5 4 8 0.1 40 150 -65~150 V A A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 3.12 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6037 VCEO(SUS) Collector-emitter sustaining voltage 2N6038 2N6039 VCEsat-1 VCEsat-2 VBEsat VBE ICEO ICEX ICBO IEBO hFE-1 hFE-2 hFE-3 COB Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance IC=2A; IB=8mA IC=4A; IB=40mA IC=4A; IB=40mA IC=2A ; VCE=3V IC=0.1A ;IB=0 2N6037 2N6038 2N6039 CONDITIONS MIN 40 60 80 TYP. MAX UNIT V 2.0 3.0 4.0 2.8 0.1 0.1 0.5 0.1 2.0 500 750 100 100 15000 V V V V mA mA mA mA VCE=Rated VCEO; IB=0 VCE=Rated VCEO; VBE(off)=1.5V TC=125℃ VCB=Rated VCBO; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=3V IC=2A ; VCE=3V IC=4A ; VCE=3V IE=0;VCB=10V;f=0.1MHz pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6037 2N6038 2N6039 Fig.2 outline dimensions 3