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2N6053

2N6053

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2N6053 - Silicon PNP Power Transistors - Inchange Semiconductor Company Limited

  • 数据手册
  • 价格&库存
2N6053 数据手册
Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6055;2N6056 APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6053 2N6054 Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL VCBO PARAMETER 2N6053 Collector-base voltage 2N6054 2N6053 VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage 2N6054 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -80 -5 -8 -16 -120 100 200 -65~200 V A A mA W ℃ ℃ Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.75 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tm=25℃ unless otherwise specified SYMBOL PARAMETER 2N6053 IC=-0.1 A ;IB=0 2N6054 VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE Collector-emitter saturation voltge Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N6053 ICEO Collector cut-off current 2N6054 2N6053 ICEX Collector cut-off current 2N6054 IEBO hFE-1 hFE-2 COB Emitter cut-off current DC current gain DC current gain Output capacitance VCE=-40V; IB=0 VCE=-60V; VBE(off)=-1.5V TC=150℃ VCE=-80V; VBE(off)=-1.5V TC=150℃ VEB=-5V; IC=0 IC=-4A ; VCE=-3V IC=-8A ; VCE=-3V IE=0;VCB=-10V;f=0.1MHz IC=-4A ;IB=-16mA IC=-8A ;IB=-80mA IC=-8A ;IB=-80mA IC=-4A ; VCE=-3V VCE=-30V; IB=0 CONDITIONS 2N6053 2N6054 MIN -60 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V -80 -2.0 -3.0 -4.0 -2.8 V V V V -0.5 mA -0.5 -5.0 mA -0.5 -5.0 -2.0 750 100 350 pF 18000 mA 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6053 2N6054 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3
2N6053 价格&库存

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