2N6059

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High current ;high dissipation ·DARLINGTON ·Complement to type 2N5883;2N5884 APPLICATIONS ·They are intended for use in power linear and low frequency switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6058 2N6059 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO PARAMETER 2N6058 Collector-base voltage 2N6059 2N6058 VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage 2N6059 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 100 5 12 20 0.2 150 200 -65~200 V A A mA W ℃ ℃ Open emitter 100 80 V CONDITIONS VALUE 80 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6058 2N6059 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6058 VCEO(SUS) Collector-emitter sustaining voltage 2N6059 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N6058 ICEO Collector cut-off current 2N6059 IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Trainsistion frequency VCE=50V; IB=0 VEB=5V; IC=0 IC=6A ; VCE=3V IC=12A ; VCE=3V IC=5A ;VCE=3V;f=1MHz 750 100 4 MHz 2.0 mA IC=6A ;IB=24mA IC=12A ;IB=120mA IC=12A ;IB=120mA IC=6A ; VCE=3V VCE=40V; IB=0 1.0 mA IC=0.1A ;IB=0 100 2.0 3.0 4.0 2.8 V V V V CONDITIONS MIN 80 V TYP. MAX UNIT 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6058 2N6059 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3