0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
2N6111

2N6111

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2N6111 - Silicon PNP Power Transistors - Inchange Semiconductor Company Limited

  • 数据手册
  • 价格&库存
2N6111 数据手册
Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS ・Power amplifier and switching circuits applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2N6107 2N6109 2N6111 Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2N6107 VCBO Collector-base voltage 2N6109 2N6111 2N6107 VCEO Collector-emitter voltage 2N6109 2N6111 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE -40 -60 -80 -30 -50 -70 -5 -7 -10 -3 40 150 -65~150 V A A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 3.125 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6107 VCEO(SUS) Collector-emitter sustaining voltage 2N6109 2N6111 VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage 2N6107 ICEO Collector cut-off current 2N6109 2N6111 2N6107 ICEX Collector cut-off current 2N6109 2N6111 IEBO Emitter cut-off current 2N6107 hFE-1 DC current gain 2N6109 2N6111 hFE-2 fT DC current gain Transition frequency IC=-7A;IB=-3A IC=-7A ; VCE=-4V VCE=-20V; IB=0 VCE=-40V; IB=0 VCE=-60V; IB=0 IC=-0.1A ;IB=0 2N6107 2N6109 2N6111 CONDITIONS MIN -30 -50 -70 TYP. MAX UNIT V -3.5 -3.0 V V -1.0 mA VCE=-40V; VBE=-1.5V VCE=-30V; BE=-1.5V,TC=125℃ VCE=-60V; VBE=-1.5V VCE=-50V; BE=-1.5V,TC=125℃ VCE=-80V; VBE=-1.5V VCE=-70V; BE=-1.5V,TC=125℃ VEB=-5V; IC=0 IC=-2A ; VCE=-4V IC=-2.5A ; VCE=-4V IC=-3A ; VCE=-4V IC=-7A ; VCE=-4V IC=-0.5A ; VCE=-4V;f=1MHz 2.3 10 30 -0.1 -2.0 -0.1 -2.0 -0.1 -2.0 -1.0 mA mA 150 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6107 2N6109 2N6111 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3
2N6111 价格&库存

很抱歉,暂时无法提供与“2N6111”相匹配的价格&库存,您可以联系我们找货

免费人工找货