2N6122

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to PNP type : 2N6124 ;2N6125 ;2N6126 APPLICATIONS ・For use in power amplifier and switching circuit applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2N6121 2N6122 2N6123 Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2N6121 VCBO Collector-base voltage 2N6122 2N6123 2N6121 VCEO Collector-emitter voltage 2N6122 2N6123 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 45 60 80 45 60 80 5 4 8 1 40 150 -65~150 V A A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 3.125 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6121 VCEO(SUS) Collector-emitter sustaining voltage 2N6122 2N6123 VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage 2N6121 ICEX Collector cut-off current 2N6122 2N6123 2N6121 ICEO Collector cut-off current 2N6122 2N6123 IEBO Emitter cut-off current 2N6121 IC=1.5A;IB=0.15A IC=4.0A;IB=1.0A IC=1.5A ; VCE=2V VCE=45V;VBE=1.5V TC=125℃ VCE=60V;VBE=1.5V TC=125℃ VCE=80V;VBE=1.5V TC=125℃ VCE=45V;IB=0 VCE=60V;IB=0 VCE=80V;IB=0 VEB=5V; IC=0 IC=0.1A ;IB=0 2N6121 2N6122 2N6123 CONDITIONS MIN 45 60 80 TYP. MAX UNIT V 0.6 1.4 1.2 0.1 2.0 0.1 2.0 0.1 2.0 V V V mA 1.0 mA 1.0 mA 25 hFE-1 DC current gain 2N6122 2N6123 2N6121 10 hFE-2 DC current gain 2N6122 2N6123 fT Transition frequency IC=1A ; VCE=4V IC=4A ; VCE=2V 7 2.5 IC=1.5A ; VCE=2V 20 100 80 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6121 2N6122 2N6123 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3