2N6133

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・High power dissipation ・Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS ・Power amplifier and medium speed switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2N6132 2N6133 2N6134 Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2N6132 VCBO Collector-base voltage 2N6133 2N6134 2N6132 VCEO Collector-emitter voltage 2N6133 2N6134 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE -40 -60 -80 -40 -60 -80 -5 -7 -3 50 150 -65~150 V A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6132 VCEO(SUS) Collector-emitter sustaining voltage 2N6133 2N6134 2N6132 IC=-0.1A ;IB=0 CONDITIONS 2N6132 2N6133 2N6134 MIN -40 -60 -80 TYP. MAX UNIT V -1.4 VCEsat Collector-emitter saturation voltage 2N6133 2N6134 VBE Base-emitter on voltage 2N6132 ICEV Collector cut-off current 2N6133 2N6134 IEBO hFE fT Emitter cut-off current DC current gain Transition frequency IC=-2.5A ; VCE=-4V VCE=-40V;VBE=1.5V TC=150℃ VCE=-60V;VBE=1.5V TC=150℃ VCE=-80V; VBE=1.5V TC=150℃ VEB=-5V; IC=0 IC=-2.5A ; VCE=-4V IC=-0.2A ; VCE=-4V 20 2.5 IC=-7A;IB=-1.2A -1.8 -1.4 -0.5 -3.0 mA -0.5 -3.0 -0.5 -3.0 -1.0 100 MHz mA mA V V 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6132 2N6133 2N6134 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3