2N6216

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6216 2N6217 DESCRIPTION ・With TO-3 package ・High current ,high power dissipation APPLICATIONS ・For use in switching and linear power applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N6216 VCBO Collector-base voltage 2N6217 2N6216 VCEO Collector-emitter voltage 2N6217 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=100℃ Open collector Open base 140 7 10 71 150 -65~200 V A W ℃ ℃ Open emitter 180 150 V CONDITIONS VALUE 200 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.46 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6216 VCEO(SUS) Collector-emitter sustaining voltage 2N6217 VCEsat-1 VCEsat-2 VBEsat Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2N6216 ICEO Collector cut-off current 2N6217 ICBO IEBO hFE fT Collector cut-off current Emitter cut-off current DC current gain Transition frequency VCE=70V; IB=0 VCB=RatedVCBO; IE=0 VEB=7V; IC=0 IC=5A ; VCE=5V IC=1A ; VCE=10V IC=4A; IB=0.4A IC=6A; IB=0.75A IC=6A; IB=0.75A VCE=80V; IB=0 IC=0.1A ;IB=0 CONDITIONS 2N6216 2N6217 MIN 150 TYP. MAX UNIT V 140 1.2 1.6 2.0 V V V 5.0 mA 1.0 1.0 20 20 80 mA mA MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6216 2N6217 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3