2N6226

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6226 2N6227 2N6228 DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・For high power audio;stepping motor and other linear applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N6226 VCBO Collector-base voltage 2N6227 2N6228 2N6226 VCEO Collector-emitter voltage 2N6227 2N6228 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE -100 -120 -140 -100 -120 -140 -7 -6 150 150 -65~200 V A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.92 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6226 2N6227 2N6228 CONDITIONS MIN TYP. MAX UNIT 2N6226 Collector-emitter sustaining voltage -100 VCEO(SUS) 2N6227 IC=-0.2A ;IB=0 -120 V 2N6228 -140 VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.4A -1.2 V VBE Base-emitter on voltage IC=-3A ; VCE=-2V -1.8 V ICEO Collector cut-off current VCE=Rated VCEO; IB=0 -5.0 mA ICBO Collector cut-off current VCB=Rated VCBO; IE=0 -1.0 mA IEBO Emitter cut-off current VEB=-7V; IC=0 2N6226 25 -0.1 mA 100 hFE DC current gain 2N6227 IC=-3A ; VCE=-2V 20 80 2N6228 15 60 fT Transition frequency IC=-0.5A ; VCE=-4V 1 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6226 2N6227 2N6228 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3