2N6229

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6229 2N6230 2N6231 DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・For high power audio; disk head positioners and other linear applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N6229 VCBO Collector-base voltage 2N6230 2N6231 2N6229 VCEO Collector-emitter voltage 2N6230 2N6231 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE -100 -120 -140 -100 -120 -140 -7 -10 150 150 -65~200 V A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6229 2N6230 2N6231 CONDITIONS MIN TYP. MAX UNIT 2N6229 Collector-emitter sustaining voltage -100 VCEO(SUS) 2N6230 IC=-0.2A ;IB=0 -120 V 2N6231 -140 VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.4A -1.0 V VBE Base-emitter on voltage IC=-5A ; VCE=-2V -2.0 V ICEO Collector cut-off current VCE=Rated VCEO; IB=0 -5.0 mA ICBO Collector cut-off current VCB=Rated VCBO; IE=0 -1.0 mA IEBO Emitter cut-off current VEB=-7V; IC=0 2N6229 25 -0.1 mA 100 hFE DC current gain 2N6230 IC=-5A ; VCE=-2V 20 80 2N6231 15 60 fT Transition frequency IC=-0.5A ; VCE=-4V 1 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6229 2N6230 2N6231 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3