2N6250

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6249 2N6250 2N6251 DESCRIPTION ・With TO-3 package ・High voltage,high speed ・Low collector saturation voltage APPLICATIONS ・High voltage inverters ・Switching regulators ・Line operated amplifier PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-3) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2N6249 VCBO Collector-base voltage 2N6250 2N6251 2N6249 VCEO Collector-emitter voltage 2N6250 2N6251 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 300 375 450 200 275 350 6 10 30 10 175 200 -65~200 V A A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6249 VCEO(SUS) Collector-emitter sustaining voltage 2N6250 2N6251 2N6249 VCE(sat) Collector-emitter saturation voltage 2N6250 2N6251 2N6249 VBE(sat) Base-emitter saturation voltage 2N6250 2N6251 ICEV Collector cut-off current 2N6249 ICEO Collector cut-off current 2N6250 2N6251 IEBO Emitter cut-off current 2N6249 hFE DC current gain 2N6250 2N6251 fT Is/b Transition frequency Second breakdown collector current With base forward biased IC=10A ; VCE=3V IC=10A;IB=1.0A IC=10A;IB=1.25 A IC=10A;IB=1.67 A IC=10A;IB=1.0A IC=10A;IB=1.25 A IC=10A;IB=1.67 A IC=200mA ; IB=0 2N6249 2N6250 2N6251 CONDITIONS MIN 200 275 350 TYP. MAX UNIT V 1.5 V 2.25 V VCE=RatedVCEV;VBE=-1.5V TC=125℃ VCE=150V;IB=0 VCE=225V;IB=0 VCE=300V;IB=0 VEB=6V; IC=0 10 8 6 IC=1A ; VCE=10V，f=1MHz VCE=30V,t=1.0s, Nonrepetitive 2.5 5.8 5.0 10 mA 5.0 mA 1.0 50 50 50 mA MHz A Switching times tr ts tf Rise time Storage time Fall time For 2N6249 IC=10A; IB1=-IB2=1.0A;VCC=200V For 2N6250 IC=10A;IB1=-IB2=1.25A;VCC=200V For 2N6251 IC=10A;IB1=-IB2=1.67A;VCC=200V 2.0 3.5 1.0 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6249 2N6250 2N6251 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3