2N6259

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain: hFE= 15-60@IC= 8A ·High Power Dissipation : PD= 150W@ IC= 15A APPLICATIONS ·Designed for high power audio, disk head positioners, linear amplifiers, switching regulators,solenoid drivers,and DC-DC converters or inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VCEX VEBO IC ICM IB IBM PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current- Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature VALUE 170 150 170 7 16 30 4 15 150 200 -65~200 UNIT V V V V A A A A W ℃ ℃ 2N6259 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.17 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(on) ICEO ICEX ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 100mA ; IB= 0 IC= 8A; IB= 0.8A IC= 16A; IB= 3.2A IC= 8A ; VCE= 2V VCE= 130V; IB= 0 VCE= 150V; VBE(off)= 1.5V VCB= 150V; IE= 0 VEB= 7V; IC= 0 IC= 8A ; VCE= 2V IC= 16A ; VCE= 4V 15 10 MIN 150 2N6259 MAX UNIT V 1.0 2.5 2.0 10 2.0 2.0 5.0 60 V V V mA mA mA mA isc Website：www.iscsemi.cn 2