2N6260

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Low saturation voltage ・Wide safe operating area APPLICATIONS ・Power switching circuits ・High-fidelity amplifers ・Solenoid drivers ・Series and shunt-regulator driver and output stages PINNING (See Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION 2N6260 Fig.1 simplified outline (TO-66) and symbol Collector Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 50 40 7 4 2 29 150 -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 3.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N6260 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ; IB=0 80 V VCEsat VBE Collector-emitter saturation voltage IC=1.5A; IB=0.15A IC=1.5A ; VCE=2V VCE=40V;VBE(off)=-1.5V TC=150℃ VCE=30V; IB=0 1.5 V Base -emitter on voltage 1.5 0.5 1.0 0.5 V ICEV Collector cut-off current mA ICEO Collector cut-off current mA IEBO Emitter cut-off current VEB=7V; IC=0 0.2 mA hFE-1 DC current gain IC=4A ; VCE=2V 5 hFE-2 DC current gain IC=1.5A ; VCE=2V 20 100 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6260 Fig.2 Outline dimensions 3