Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6262
DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・Designed for audio amplifier and switching circuits applications
PINNING PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION
Absolute maximum ratings(Ta=℃)
SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 170 150 5 10 150 150 -65~200 UNIT V V V A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6262
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ;IB=0
150
V
VCEsat VBEsat
Collector-emitter saturation voltge
IC=5A ;IB=0.5A IC=10A ;IB=2A
2.0
V
Base-emitter saturation voltage
3.5
V
VBE
Base-emitter on voltage
IC=3A ; VCE=2V
1.8
V
ICEO
Collector cut-off current
VCE=100V; IB=0 VCE=150V; VBE(off)=1.5V TC=150℃ VCB=150V; IE=0
1.0 0.1 5.0 0.1
mA
ICEV
Collector cut-off current
mA
ICBO
Emitter cut-off current
mA
IEBO hFE
Emitter cut-off current
VEB=5V; IC=0 IC=3A ; VCE=2V 20
0.1
mA
DC current gain
70
fT
Transition frequency
IC=1A;VCE=10V
0.8
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N6262
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
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