2N6262

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6262 DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・Designed for audio amplifier and switching circuits applications PINNING PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 170 150 5 10 150 150 -65~200 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6262 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 150 V VCEsat VBEsat Collector-emitter saturation voltge IC=5A ;IB=0.5A IC=10A ;IB=2A 2.0 V Base-emitter saturation voltage 3.5 V VBE Base-emitter on voltage IC=3A ; VCE=2V 1.8 V ICEO Collector cut-off current VCE=100V; IB=0 VCE=150V; VBE(off)=1.5V TC=150℃ VCB=150V; IE=0 1.0 0.1 5.0 0.1 mA ICEV Collector cut-off current mA ICBO Emitter cut-off current mA IEBO hFE Emitter cut-off current VEB=5V; IC=0 IC=3A ; VCE=2V 20 0.1 mA DC current gain 70 fT Transition frequency IC=1A;VCE=10V 0.8 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6262 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3