2N6271

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High current capability ・Wide safe operating area APPLICATIONS ・Designed for audio amplifier and switching circuits applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6270 2N6271 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N6270 VCBO Collector-base voltage 2N6271 2N6270 VCEO Collector-emitter voltage 2N6271 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 100 7 30 150 150 -65~200 V A W ℃ ℃ Open emitter 120 80 V CONDITIONS VALUE 100 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6270 2N6271 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N6270 VCEO(SUS) Collector-emitter sustaining voltage 2N6271 IC=0.1A ;IB=0 80 V 100 VCEsat Collector-emitter saturation voltage IC=7.5A ;IB=0.75A 1.0 V VBEsat Base-emitter saturation voltage IC=7.5A ;IB=0.75A 1.3 V ICEO Collector cut-off current VCE=1/2RatedVCE; IB=0 5.0 mA ICEV Collector cut-off current VCE=RatedVCE; VBE(off)=1.5V 1.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE DC current gain IC=15A ; VCE=4V 20 100 fT Trainsistion frequency IC=1A ; VCE=10V 75 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6270 2N6271 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3