2N6275

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6275 DESCRIPTION ·High Switching Speed ·High DC Current Gain: hFE= 30-120@ IC= 20A ·Low Collector Saturation Voltage: VCE(sat)=1.0V(Min.)@ IC= 20A ·Complement to Type 2N6378 APPLICATIONS ·Designed for use in industrial-military power amplifier and switching circuit applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 140 120 6 50 100 20 250 200 -65~200 UNIT V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 0.7 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 VBE(on) ICEO ICEX IEBO hFE-1 hFE-2 hFE-3 fT COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Current-Gain—Bandwidth Product Output Capacitance CONDITIONS IC= 50mA; IB= 0 IC= 20A; IB= 2A IC= 50A; IB= 10A IC= 20A; IB= 2A IC= 50A; IB= 10A IC= 20A; VCE= 4V VCE= 60V; IB= 0 B 2N6275 MIN 120 MAX UNIT V 1.0 3.0 1.8 3.5 1.8 50 10 1.0 0.1 50 30 10 30 600 120 V V V V V μA μA mA mA VCE= 140V; VBE(off)=1.5V VCE= 140V; VBE(off)=1.5V; TC=150℃ VEB= 6V; IC= 0 IC= 1A; VCE= 4V IC= 20A; VCE= 4V IC= 50A; VCE= 4V IC= 1A; VCE= 10V IE= 0; VCB= 10V; ftest= 0.1MHz MHz pF Switching times tr ts tf Rise Time Storage Time VCC= 80V, IC= 20A, IB1= -IB2= 2A Fall Time 0.25 μs VCC= 80V, IC= 20A, IB1= 2A, VBE(off)= 5V 0.35 0.80 μs μs isc Website：www.iscsemi.cn 2