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2N6283

2N6283

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2N6283 - Silicon NPN Power Transistors - Inchange Semiconductor Company Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
2N6283 数据手册
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6285/6286/6287 ・High DC current gain ・DARLINGTON APPLICATIONS ・For use in general-purpose amplifier and low-frequency switching applications PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N6282 2N6283 2N6284 Fig.1 simplified outline (TO-3) and symbol Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N6282 VCBO Collector-base voltage 2N6283 2N6284 2N6282 VCEO Collector-emitter voltage 2N6283 2N6284 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 60 80 100 60 80 100 5 20 40 0.5 160 200 -65~200 V A A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.09 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6282 2N6283 2N6284 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6282 VCEO(SUS) Collector-emitter sustaining voltage 2N6283 2N6284 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N6282 ICEO Collector cut-off current 2N6283 2N6284 2N6282 ICEX Collector cut-off current 2N6283 2N6284 IEBO hFE-1 hFE-2 COB Emitter cut-off current DC current gain DC current gain Output capacitance IC=10A; IB=40mA IC=20A ;IB=200mA IC=20A ;IB=200mA IC=10A ; VCE=3V VCE=30V; IB=0 VCE=40V; IB=0 VCE=50V; IB=0 VCE=60V; VBE=-1.5V TC=150℃ VCE=80V; VBE=-1.5V TC=150℃ VCE=100V; VBE=-1.5V TC=150℃ VEB=5V; IC=0 IC=10A ; VCE=3V IC=20A ; VCE=3V IE=0; VCB=10V;f=1MHz 750 100 400 pF 0.5 5.0 0.5 5.0 0.5 5.0 2.0 18000 mA mA 1.0 mA IC=0.2A ;IB=0 CONDITIONS MIN 60 80 100 2.0 3.0 4.0 2.8 V V V V V TYP. MAX UNIT 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6282 2N6283 2N6284 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3
2N6283
1. 物料型号:型号为STM32F103C8T6,是一款基于ARM Cortex-M3内核的32位微控制器。

2. 器件简介:该器件是意法半导体生产的高性能微控制器,具有多种通信接口和外设,适用于多种嵌入式应用。

3. 引脚分配:该器件共有48个引脚,包括电源引脚、地引脚、I/O引脚等,具体分配需参考引脚图。

4. 参数特性:主频72MHz,内置64KB Flash和20KB RAM,工作电压2.0V-3.6V,工作温度-40℃至+85℃。

5. 功能详解:包括GPIO、ADC、定时器、通信接口(UART、SPI、I2C)等模块的详细介绍。

6. 应用信息:适用于工业控制、医疗设备、消费电子等多种应用场景。
2N6283 价格&库存

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