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2N6286

2N6286

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2N6286 - Silicon PNP Power Transistors - Inchange Semiconductor Company Limited

  • 数据手册
  • 价格&库存
2N6286 数据手册
Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6282/6283/6284 ・High DC current gain ・DARLINGTON APPLICATIONS ・For use in general-purpose amplifier and low-frequency switching applications PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N6285 2N6286 2N6287 Fig.1 simplified outline (TO-3) and symbol Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N6285 VCBO Collector-base voltage 2N6286 2N6287 2N6285 VCEO Collector-emitter voltage 2N6286 2N6287 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE -60 -80 -100 -60 -80 -100 -5 -20 -40 -0.5 160 200 -65~200 V A A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.09 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6285 2N6286 2N6287 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6285 VCEO(SUS) Collector-emitter sustaining voltage 2N6286 2N6287 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N6285 ICEO Collector cut-off current 2N6286 2N6287 2N6285 ICEX Collector cut-off current 2N6286 2N6287 IEBO hFE-1 hFE-2 COB Emitter cut-off current DC current gain DC current gain Output capacitance IC=-10A; IB=-40mA IC=-20A ;IB=-200mA IC=-20A ;IB=-200mA IC=-10A ; VCE=-3V VCE=-30V; IB=0 VCE=-40V; IB=0 VCE=-50V; IB=0 VCE=-60V; VBE=-1.5V TC=150℃ VCE=-80V; VBE=-1.5V TC=150℃ VCE=-100V; VBE=-1.5V TC=150℃ VEB=-5V; IC=0 IC=-10A ; VCE=-3V IC=-20A ; VCE=-3V IE=0; VCB=-10V;f=1MHz 750 100 600 pF -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 -2.0 18000 mA mA -1.0 mA IC=-0.2A ;IB=0 CONDITIONS MIN -60 -80 -100 -2.0 -3.0 -4.0 -2.8 V V V V V TYP. MAX UNIT 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6285 2N6286 2N6287 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3
2N6286 价格&库存

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