2N6288

2N6288

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2N6288 - Silicon NPN Power Transistors - Inchange Semiconductor Company Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
2N6288 数据手册
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6288 2N6290 2N6292 DESCRIPTION ・With TO-220 package ・Complement to PNP type: 2N6107; 2N6109 ;2N6111 APPLICATIONS ・Power amplifier and switching circuits applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2N6288 VCBO Collector-base voltage 2N6290 2N6292 2N6288 VCEO Collector-emitter voltage 2N6290 2N6292 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 40 60 80 30 50 70 5 7 10 3 40 150 -65~150 V A A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 3.125 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6288 VCEO(SUS) Collector-emitter sustaining voltage 2N6290 2N6292 2N6288 VCEsat-1 Collector-emitter saturation voltage 2N6290 2N6292 VCEsat-2 Collector-emitter saturation voltage 2N6288 VBE-1 Base-emitter on voltage 2N6290 2N6292 VBE-2 Base-emitter on voltage 2N6288 ICEO Collector cut-off current 2N6290 2N6292 2N6288 ICEX Collector cut-off current 2N6290 2N6292 IEBO Emitter cut-off current 2N6288 hFE-1 DC current gain 2N6290 2N6292 hFE-2 fT DC current gain Transition frequency IC=3A;IB=0.3A IC=2.5A;IB=0.25A IC=2A;IB=0.2A IC=7A;IB=3A IC=3A ; VCE=4V IC=2.5A ; VCE=4V IC=2A ; VCE=4V IC=7A ; VCE=4V VCE=20V; IB=0 VCE=40V; IB=0 VCE=60V; IB=0 IC=0.1A ;IB=0 2N6288 2N6290 2N6292 CONDITIONS MIN 30 50 70 TYP. MAX UNIT V 1.0 V 3.5 V 1.5 V 3.0 V 1.0 mA VCE=40V; VBE=-1.5V VCE=30V; BE=-1.5V,TC=125℃ VCE=60V; VBE=-1.5V VCE=50V; BE=-1.5V,TC=125℃ VCE=80V; VBE=-1.5V VCE=70V; BE=-1.5V,TC=125℃ VEB=5V; IC=0 IC=3A ; VCE=4V IC=2.5A ; VCE=4V IC=2A ; VCE=4V IC=7A ; VCE=4V IC=0.5A ; VCE=4V;f=1MHz 2.3 2.5 30 0.1 2.0 0.1 2.0 0.1 2.0 1.0 mA mA 150 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6288 2N6290 2N6292 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3
2N6288
1. 物料型号: - 2N6288、2N6290、2N6292是Inchange Semiconductor生产的NPN型功率晶体管。

2. 器件简介: - 这些晶体管采用TO-220封装,与PNP型号2N6107、2N6109、2N6111相补充。它们适用于功率放大和开关电路应用。

3. 引脚分配: - 1号引脚:基极(Base) - 2号引脚:集电极(Collector),连接到安装底座 - 3号引脚:发射极(Emitter)

4. 参数特性: - 绝对最大额定值(Ta=25°C): - 2N6288:集-基电压(VCBO)40V,集-射电压(VCEO)30V - 2N6290:集-基电压(VCBO)60V,集-射电压(VCEO)50V - 2N6292:集-基电压(VCBO)80V,集-射电压(VCEO)70V - 其他参数包括发射-基电压(VEBO)、集电极电流(IC)、集电极电流峰值(ICM)、基极电流(IB)和总功耗(PT)。

5. 功能详解: - 包括热阻(Rth j-c)、集-射饱和电压(VcEsat)、基-射开启电压(VBE)、集电极截止电流(ICEO)、发射极截止电流(IEBO)和直流电流增益(hFE)等参数。

6. 应用信息: - 这些晶体管适用于功率放大和开关电路应用。

7. 封装信息: - 提供了TO-220C的简化外形图和符号,以及未标注公差的外形尺寸图。
2N6288 价格&库存

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