2N6288

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6288 2N6290 2N6292 DESCRIPTION ・With TO-220 package ・Complement to PNP type: 2N6107; 2N6109 ;2N6111 APPLICATIONS ・Power amplifier and switching circuits applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2N6288 VCBO Collector-base voltage 2N6290 2N6292 2N6288 VCEO Collector-emitter voltage 2N6290 2N6292 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 40 60 80 30 50 70 5 7 10 3 40 150 -65~150 V A A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 3.125 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6288 VCEO(SUS) Collector-emitter sustaining voltage 2N6290 2N6292 2N6288 VCEsat-1 Collector-emitter saturation voltage 2N6290 2N6292 VCEsat-2 Collector-emitter saturation voltage 2N6288 VBE-1 Base-emitter on voltage 2N6290 2N6292 VBE-2 Base-emitter on voltage 2N6288 ICEO Collector cut-off current 2N6290 2N6292 2N6288 ICEX Collector cut-off current 2N6290 2N6292 IEBO Emitter cut-off current 2N6288 hFE-1 DC current gain 2N6290 2N6292 hFE-2 fT DC current gain Transition frequency IC=3A;IB=0.3A IC=2.5A;IB=0.25A IC=2A;IB=0.2A IC=7A;IB=3A IC=3A ; VCE=4V IC=2.5A ; VCE=4V IC=2A ; VCE=4V IC=7A ; VCE=4V VCE=20V; IB=0 VCE=40V; IB=0 VCE=60V; IB=0 IC=0.1A ;IB=0 2N6288 2N6290 2N6292 CONDITIONS MIN 30 50 70 TYP. MAX UNIT V 1.0 V 3.5 V 1.5 V 3.0 V 1.0 mA VCE=40V; VBE=-1.5V VCE=30V; BE=-1.5V,TC=125℃ VCE=60V; VBE=-1.5V VCE=50V; BE=-1.5V,TC=125℃ VCE=80V; VBE=-1.5V VCE=70V; BE=-1.5V,TC=125℃ VEB=5V; IC=0 IC=3A ; VCE=4V IC=2.5A ; VCE=4V IC=2A ; VCE=4V IC=7A ; VCE=4V IC=0.5A ; VCE=4V;f=1MHz 2.3 2.5 30 0.1 2.0 0.1 2.0 0.1 2.0 1.0 mA mA 150 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6288 2N6290 2N6292 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3