Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2N6296 2N6297
DESCRIPTION ・With TO-66 package ・DARLINGTON ・Complement to type 2N6294/6295 APPLICATIONS ・For high gain amplifier and medium speed switching applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO PARAMETER 2N6296 Collector-base voltage 2N6297 2N6296 VCEO VEBO IC ICM IB PT Tj Tstg Collector-emitter voltage 2N6298 Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -80 -5 -4 -8 -80 50 150 -65~200 V A A mA W ℃ ℃ Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX 3.5 UNIT ℃/W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS
2N6296 2N6297
MIN
TYP.
MAX
UNIT
2N6296 V(BR)CEO Collector-emitter breakdown voltage 2N6297 IC=-50mA ; IB=0
-60 V -80
VCEsat-1
Collector-emitter saturation voltage
IC=-2A ;IB=-8mA
-2.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=-4A ;IB=-40mA
-3.0
V
VBEsat
Base-emitter saturation voltage
IC=-4A ;IB=-40mA
-4.0
V
VBE
Base -emitter on voltage
IC=-2A ; VCE=-3V VCE=RatedVCE;VBE(off)=1.5V TC=150℃ VCE=1/2Rated VCEO; IB=0 VEB=-5V; IC=0
-2.8 -0.5 -5.0 -0.5
V
ICEX
Collector cut-off current
mA
ICEO IEBO
Collector cut-off current
mA
Emitter cut-off current
-2.0
mA
hFE-1
DC current gain
IC=-2A ; VCE=-3V
750
18000
hFE-2
DC current gain
IC=-4A ; VCE=-3V
100
fT
Transition frequency
IC=-1.5A ; VCE=-3V;f=1.0MHz
4.0
MHz
COB
Output capacitance
IE=0 ; VCB=-10V;f=0.1MHz
200
pF
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2N6296 2N6297
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2N6296 2N6297
4
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