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2N6297

2N6297

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2N6297 - Silicon PNP Power Transistors - Inchange Semiconductor Company Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
2N6297 数据手册
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6296 2N6297 DESCRIPTION ・With TO-66 package ・DARLINGTON ・Complement to type 2N6294/6295 APPLICATIONS ・For high gain amplifier and medium speed switching applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO PARAMETER 2N6296 Collector-base voltage 2N6297 2N6296 VCEO VEBO IC ICM IB PT Tj Tstg Collector-emitter voltage 2N6298 Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -80 -5 -4 -8 -80 50 150 -65~200 V A A mA W ℃ ℃ Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX 3.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6296 2N6297 MIN TYP. MAX UNIT 2N6296 V(BR)CEO Collector-emitter breakdown voltage 2N6297 IC=-50mA ; IB=0 -60 V -80 VCEsat-1 Collector-emitter saturation voltage IC=-2A ;IB=-8mA -2.0 V VCEsat-2 Collector-emitter saturation voltage IC=-4A ;IB=-40mA -3.0 V VBEsat Base-emitter saturation voltage IC=-4A ;IB=-40mA -4.0 V VBE Base -emitter on voltage IC=-2A ; VCE=-3V VCE=RatedVCE;VBE(off)=1.5V TC=150℃ VCE=1/2Rated VCEO; IB=0 VEB=-5V; IC=0 -2.8 -0.5 -5.0 -0.5 V ICEX Collector cut-off current mA ICEO IEBO Collector cut-off current mA Emitter cut-off current -2.0 mA hFE-1 DC current gain IC=-2A ; VCE=-3V 750 18000 hFE-2 DC current gain IC=-4A ; VCE=-3V 100 fT Transition frequency IC=-1.5A ; VCE=-3V;f=1.0MHz 4.0 MHz COB Output capacitance IE=0 ; VCB=-10V;f=0.1MHz 200 pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6296 2N6297 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6296 2N6297 4
2N6297
1. 物料型号: - 2N6296 - 2N6297

2. 器件简介: - 2N6296和2N6297是由Inchange Semiconductor生产的硅PNP功率晶体管,具有TO-66封装,是达林顿配置,是2N6294/6295的补充型号。这些晶体管适用于高增益放大和中速开关应用。

3. 引脚分配: - 引脚1:基极(Base) - 引脚2:发射极(Emitter) - 引脚3:集电极(Collector)

4. 参数特性: - 绝对最大额定值(Ta=25°C): - VCBO(集电极-基极电压):2N6296为-60V,2N6297为-80V - VCEO(集电极-发射极电压):2N6296在开基极时为-60V,2N6297为-80V - VEBO(发射极-基极电压):开集电极时为-5V - Ic(集电极电流):-4A - ICM(集电极峰值电流):-8A - IB(基极电流):-80mA - PT(总功率耗散):50W - Tj(结温):150°C - Tstg(储存温度):-65至200°C

5. 功能详解: - 这些晶体管在Tj=25°C下的特性如下: - V(BR)CEO(集电极-发射极击穿电压) - VCEsat(集电极-发射极饱和电压) - VBEsat(基极-发射极饱和电压) - VBE(基极-发射极导通电压) - IcEx(集电极截止电流) - ICEO(集电极截止电流) - IEBO(发射极截止电流) - hFE(直流电流增益) - fr(过渡频率) - CoB(输出电容)

6. 应用信息: - 这些晶体管适用于高增益放大和中速开关应用。

7. 封装信息: - 封装类型为TO-66。
2N6297 价格&库存

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