2N6299

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・DARLINGTON ・Low collector saturation voltage ・Complement to type 2N6300/6301 APPLICATIONS ・General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6298 2N6299 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO PARAMETER 2N6298 Collector-base voltage 2N6299 2N6298 VCEO VEBO IC ICM IB PT Tj Tstg Collector-emitter voltage 2N6299 Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -80 -5 -8 -16 -0.12 75 200 -65~200 V A A A W ℃ ℃ Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX 2.33 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6298 VCEO(SUS) Collector-emitter sustaining voltage 2N6299 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base -emitter on voltage 2N6298 ICEX Collector cut-off current 2N6299 2N6298 ICEO Collector cut-off current 2N6299 IEBO hFE-1 hFE-2 COB Emitter cut-off current DC current gain DC current gain Output capacitance VCE=-40V; IB=0 VEB=-5V; IC=0 IC=-4A ; VCE=-3V IC=-8A ; VCE=-3V IE=0 ; VCB=-10V;f=0.1MHz VCE=-80V; VBE(off)=-1.5V TC=150℃ VCE=-30V; IB=0 IC=-4A; IB=-16mA IC=-8A; IB=-80mA IC=-8A; IB=-80mA IC=-4A ; VCE=-3V VCE=-60V; VBE(off)=-1.5V TC=150℃ IC=-0.1A ; IB=0 CONDITIONS 2N6298 2N6299 MIN -60 TYP. MAX UNIT V -80 -2.0 -3.0 -4.0 -2.8 -0.5 -5.0 mA -0.5 -5.0 V V V V -0.5 mA -2.0 750 100 300 18000 mA pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6298 2N6299 Fig.2 Outline dimensions 3