2N6301

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6298/6299 APPLICATIONS ·General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION 2N6300 2N6301 Fig.1 simplified outline (TO-66) and symbol Collector Absolute maximum ratings(Ta=25℃) SYMBOL VCBO PARAMETER 2N6300 Collector-base voltage 2N6301 2N6300 VCEO VEBO IC ICM IB PT Tj Tstg Collector-emitter voltage 2N6301 Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 80 5 8 16 0.12 75 200 -65~200 V A A A W ℃ ℃ Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX 2.33 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6300 VCEO(SUS) Collector-emitter sustaining voltage 2N6301 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base -emitter on voltage 2N6300 ICEX Collector cut-off current 2N6301 2N6300 ICEO Collector cut-off current 2N6301 IEBO hFE-1 hFE-2 COB Emitter cut-off current DC current gain DC current gain Output capacitance VCE=40V; IB=0 VEB=5V; IC=0 IC=4A ; VCE=3V IC=8A ; VCE=3V IE=0 ; VCB=10V;f=0.1MHz VCE=80V; VBE(off)=1.5V TC=150℃ VCE=30V; IB=0 IC=4A; IB=16mA IC=8A; IB=80mA IC=8A; IB=80mA IC=4A ; VCE=3V VCE=60V; VBE(off)=1.5V TC=150℃ IC=0.1A ; IB=0 CONDITIONS 2N6300 2N6301 MIN 60 TYP. MAX UNIT V 80 2.0 3.0 4.0 2.8 0.5 5.0 mA 0.5 5.0 V V V V 0.5 mA 2.0 750 100 200 18000 mA pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6300 2N6301 Fig.2 Outline dimensions 3