2N6314

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Low leakage current APPLICATIONS ·Designed for general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6312 2N6313 2N6314 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N6312 VCBO Collector-base voltage 2N6313 2N6314 2N6312 VCEO Collector-emitter voltage 2N6313 2N6314 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE -40 -60 -80 -40 -60 -80 -5 -5 -10 -2 75 200 -65~200 V A A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 2.32 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6312 VCEO(SUS) Collector-emitter sustaining voltage 2N6313 2N6314 VCEsat-1 VCEsat-2 VCEsat-3 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage 2N6312 ICEO Collector cut-off current 2N6313 2N6314 2N6312 ICBO Collector cut-off current 2N6313 2N6314 ICEX IEBO hFE-1 hFE-2 hFE-3 hFE-4 COB fT Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain DC current gain Output capacitance Transition frequency IC=-1.5A; IB=-0.15A IC=-3A; IB=-0.3A IC=-5A; IB=-1.25A IC=-1.5A ; VCE=-2V VCE=-30V; IB=0 VCE=-50V; IB=0 VCE=-70V; IB=0 VCB=-40V; IE=0 VCB=-60V; IE=0 VCB=-80V; IE=0 IC=-0.1A ;IB=0 2N6312 2N6313 2N6314 CONDITIONS MIN -40 -60 -80 TYP. MAX UNIT V -0.7 -2.0 -4.0 -1.4 V V V V -1.0 mA -50 μA VCE=Rated VCE; VBE(off)=1.5V TC=125℃ VEB=-5V; IC=0 IC=-0.5A ; VCE=-2V IC=-1.5A ; VCE=-2V IC=-3A ; VCE=-2V IC=-5A ; VCE=-4V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A;VCE=-10V;f=1.0MHz 4 40 25 10 4 -0.1 -1.0 -0.5 mA mA 100 300 pF MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6312 2N6313 2N6314 Fig.2 outline dimensions 3