2N6322

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6322 DESCRIPTION ·With TO-3 package ·High current and high power capability ·Low collector saturation voltage APPLICATIONS ·For use in high current ,high power applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 300 200 5 30 10 200 200 -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N6322 MAX UNIT V(BR)CEO Collector-emitter breakdwon voltage IC=30mA ;IB=0 200 V V(BR)CBO V(BR)EBO Collector-base breakdwon voltage IC=2m A ;IE=0 IE=2m A ;IC=0 300 V Emitter-base breakdwon voltage 5 V VCEsat-1 Collector-emitter saturation voltage IC=20A ;IB=2A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=30A; IB=6A 3.0 V VBE Base-emitter on voltage IC=30A ; VCE=5V 2.5 V ICEO Collector cut-off current VCE=100V; IB=0 2.0 mA μA μA ICES IEBO Collector cut-off current VCE=300V; VBE=0 VEB=5V; IC=0 20 Emitter cut-off current 20 hFE-1 DC current gain IC=5A ; VCE=5V 40 150 hFE-2 DC current gain IC=20A ; VCE=5V 12 hFE-3 DC current gain IC=30A ; VCE=5V 6 fT Transition frequency IC=1A ; VCE=10V 10 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6322 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3