2N6326

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・Designed for audio amplifier and switching circuits applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6326 2N6327 2N6328 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N6326 VCBO Collector-base voltage 2N6327 2N6328 2N6326 VCEO Collector-emitter voltage 2N6327 2N6328 VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 60 80 100 60 80 100 5 30 7.5 200 200 -65~200 V A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6326 2N6327 2N6328 CONDITIONS MIN TYP. MAX UNIT 2N6326 Collector-emitter sustaining voltage 60 VCEO(SUS) 2N6327 IC=0.2 A ;IB=0 80 V 2N6328 100 VCEsat Collector-emitter saturation voltage IC=15A; IB=1.5A 1.2 V VBEsat Base-emitter saturation voltage IC=15A; IB=1.5A 1.5 V VBE Base-emitter on voltage IC=8A ; VCE=4V VCB=60V; IE=0 TC=150℃ VCB=80V; IE=0 TC=150℃ VCB=100V; IE=0 TC=150℃ VEB=4V; IC=0 1.5 1.0 5.0 1.0 5.0 1.0 5.0 1.0 V 2N6326 ICBO Collector cut-off current 2N6327 mA 2N6328 IEBO Emitter cut-off current mA hFE-1 DC current gain IC=8A ; VCE=4V 25 hFE-2 DC current gain IC=30A ; VCE=4V 6 30 fT Transition frequency IC=1A ; VCE=10V;f=1.0MHz 3 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6326 2N6327 2N6328 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3