2N6338

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 100V(Min)- 2N6338 = 120V(Min)- 2N6339 = 140V(Min)- 2N6340 = 160V(Min)- 2N6341 ·High Switching Speed ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 10A APPLICATIONS ·Designed for use in industrial-military power amplifier and switching circuit applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER 2N6338 2N6339 VCBO Collector-Base Voltage 2N6340 2N6341 2N6338 2N6339 VCEO Collector-Emitter Voltage 2N6340 2N6341 VEBO IC ICM IB PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature 140 150 7 25 50 10 200 200 -65~200 V A A A W ℃ ℃ 160 180 100 120 V VALUE 120 140 V UNIT 2N6338/6339/6340/6341 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 0.875 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER 2N6338 Collector-Emitter Sustaining Voltage 2N6339 IC= 50mA ; IB= 0 2N6340 2N6341 VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 VBE(on) Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage 2N6338 Collector Cutoff Current 2N6339 2N6340 2N6341 ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 fT COB Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Current-Gain—Bandwidth Product Output Capacitance IC= 10A; IB= 1A IC= 25A; IB= 2.5A IC= 10A; IB= 1A IC= 25A; IB= 2.5A IC= 10A ; VCE= 2V VCE= 50V; IB= 0 VCE= 60V; IB= 0 VCE= 70V; IB= 0 VCE= 75V; IB= 0 2N6338/6339/6340/6341 CONDITIONS MIN 100 120 MAX UNIT VCEO(SUS) V 140 150 1.0 1.8 1.8 2.5 1.8 50 50 μA 50 50 10 10 1.0 0.1 50 30 12 40 300 MHz pF 120 μA μA mA mA V V V V V ICEO VCB= RatedVCBO; IE= 0 VCE= RatedVCEO;VBE(off)= 1.5V VCE= RatedVCEO;VBE(off)= 1.5V,TC=150℃ VEB= 6V; IC=0 IC= 0.5A ; VCE= 2V IC= 10A ; VCE= 2V IC= 25A ; VCE= 2V IC= 1A ; VCE= 10V ;ftest= 10MHz IE= 0 ; VCB= 10V ;ftest= 0.1MHz Switching Times tr tstg tf Rise Time Storage Time VCC= 80V; IC= 10A; IB1= -IB2= 1A, Fall Time 0.25 μs VCC= 80V; IC= 10A;IB1= 1A, VBE(off)= 6V 0.3 1.0 μs μs isc Website：www.iscsemi.cn 2