2N6356

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High DC current gain ・DARLINGTON APPLICATIONS ・For general-purpose amplifier and low-frequency switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6356 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 50 40 5 20 0.5 150 200 -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.09 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N6356 MAX UNIT V(BR)CEO Collector-emitter breakdwon voltage IC=0.2A ;IB=0 40 V VCEsat-1 Collector-emitter saturation voltage IC=10A ;IB=40mA 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=20A ;IB=1A 4.0 V VBE sat Base-emitter saturation voltage IC=20A ;IB=1A 4.0 V VBE Base-emitter on voltage IC=10A ; VCE=4V VCE=40V;IB=0 2.8 V ICEO Collector cut-off current 1.0 mA ICBO Collector cut-off current VCB=50V; IE=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 5.0 mA hFE-1 DC current gain IC=4A ; VCE=5V 1500 20000 hFE-2 DC current gain IC=20A ; VCE=5V 100 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6356 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3