2N6371

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High dissipation capability ・Excellent safe operating area APPLICATIONS ・Series and shunt regulators ・High-fidelity amplifiers ・Power-switching circuits PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6371 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 50 40 5 15 7 117 200 -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N6371 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 40 V VCEsat-1 Collector-emitter saturation voltage IC=8A ;IB=0.8A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=16A; IB=4A 4.0 V VBE Base-emitter on voltage IC=16A ; VCE=4V 4.0 V ICEO Collector cut-off current VCE=25V; IB=0 VCE=45V;VBE(off)=1.5V VCE=40V;VBE(off)=1.5V;TC=150℃ VEB=5V; IC=0 1.5 2.0 10.0 10 mA ICEX Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=8A ; VCE=4V 15 60 hFE-2 DC current gain IC=16A ; VCE=4V 4 fT Transition freuqency IC=1A ; VCE=4V 0.8 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6371 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3