2N6374

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・Designed for switching and wide-band amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6372 2N6373 2N6374 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N6372 VCBO Collector-base voltage 2N6373 2N6374 2N6372 VCEO Collector-emitter voltage 2N6373 2N6374 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 90 70 50 80 60 40 6 6 40 150 -65~200 V A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.37 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6372 VCEO(SUS) Collector-emitter sustaining voltage 2N6373 2N6374 VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage 2N6372 ICEO Collector cut-off current 2N6373 2N6374 ICBO IEBO Collector cut-off current Emitter cut-off current 2N6372 hFE DC current gain 2N6373 2N6374 fT Transition frequency IC=2A; IB=0.2A IC=6A; IB=0.6A IC=2A; IB=0.2A IC=6A; IB=0.6A VCE=80V; IB=0 VCE=60V; IB=0 VCE=40V; IB=0 VCB=Rated VCB; IE=0 VEB=6V; IC=0 IC=2A ; VCE=2V IC=2.5A ; VCE=2V IC=3A ; VCE=2V IC=0.1A ;IB=0 2N6372 2N6373 2N6374 CONDITIONS MIN 80 60 40 TYP. MAX UNIT V 0.7 1.2 1.2 2.0 V V V V 0.1 mA 10 0.1 μA mA 20 100 IC=0.5A;VCE=10V;f=1MHz 4 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6372 2N6373 2N6374 Fig.2 outline dimensions 3