2N6385

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6648/6649/6650 ・DARLINGTON ・High DC current gain APPLICATIONS ・Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6383 2N6384 2N6385 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N6383 VCBO Collector-base voltage 2N6384 2N6385 2N6383 VCEO Collector-emitter voltage 2N6384 2N6385 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 40 60 80 40 60 80 5 10 15 0.25 100 200 -65~200 V A A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.75 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6383 2N6384 2N6385 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6383 VCEO(SUS) Collector-emitter sustaining voltage 2N6384 2N6385 VCEsat-1 VCEsat-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage 2N6383 ICEO Collector cut-off current 2N6384 2N6385 2N6383 ICEX Collector cut-off current 2N6384 2N6385 IEBO hFE-1 hFE-2 COB Emitter cut-off current DC current gain DC current gain Output capacitance IC=5A; IB=10mA IC=10A ;IB=100mA IC=5A ; VCE=3V IC=10A ; VCE=3V VCE=40V; IB=0 VCE=60V; IB=0 VCE=80V; IB=0 VCE=40V; VBE=-1.5V TC=125℃ VCE=60V; VBE=-1.5V TC=125℃ VCE=80V; VBE=-1.5V TC=125℃ VEB=5V; IC=0 IC=5A ; VCE=3V IC=10A ; VCE=3V IE=0; VCB=10V;f=1MHz 1000 100 200 pF 0.3 3.0 0.3 3.0 0.3 3.0 10 20000 mA mA 1.0 mA IC=0.2A ;IB=0 CONDITIONS MIN 40 60 80 2.0 3.0 2.8 4.5 V V V V V TYP. MAX UNIT 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6383 2N6384 2N6385 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3