2N6420

2N6420

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2N6420 - isc Silicon PNP Power Transistor - Inchange Semiconductor Company Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
2N6420 数据手册
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2N6420 DESCRIPTION ·Contunuous Collector Current-IC= -1A ·Power Dissipation-PC= 35W @TC= 25℃ ·Collector-Emitter Saturation Voltage: VCE(sat)= -5.0 V(Max)@ IC = -1A APPLICATIONS ·Designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE -250 -175 -6 -1.0 -5.0 -1.0 35 200 -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 5.0 UNIT ℃/W isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2N6420 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current IC= -50mA ; IB= 0 IC= -1A; IB= -0.125A IC= -1A ; VCE= -10V VCE= -150V; IB= 0 VCE= -225V; VBE(off)= -1.5V VCE= -225V; VBE(off)= -1.5V,TC=150℃ VEB= -6V; IC= 0 IC= -0.1A ; VCE= -10V IC= -0.5A ; VCE= -10V IC= -1A ; VCE= -10V -175 -5.0 -1.4 -10 -1.0 -3.0 -5.0 40 40 10 200 V V V mA mA VCE(sat) VBE(on) ICEO ICEX IEBO hFE-1 hFE-2 hFE-3 Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain mA isc Website:www.iscsemi.cn 2
2N6420
1. 物料型号:2N6420

2. 器件简介: - 连续集电极电流(IC):-1A - 功率耗散(PC):35W @ TC= 25℃ - 集电极-发射极饱和电压(V_{CE(sat)}):-5.0V(最大值)@ IC=-1A

3. 引脚分配: - PIN 1: BASE(基极) - PIN 2: EMITTER(发射极) - PIN 3: COLLECTOR(集电极,带外壳)

4. 参数特性: - 绝对最大额定值: - V_{CBO}(集电极-基极电压):-250V - V_{CEO}(集电极-发射极电压):-175V - V_{EBO}(发射极-基极电压):-6V - I_{C}(集电极电流-连续):-1.0A - I_{CM}(集电极电流-峰值):-5.0A - I_{B}(基极电流):-1.0A - P_{C}(集电极功率耗散@TC=25℃):35W - T_{J}(结温):200℃ - T_{stg}(存储温度):-65~200℃

5. 功能详解: - 适用于高速开关和线性放大应用,如高压运算放大器、开关稳压器、转换器、偏转级和高保真放大器。

6. 应用信息: - 设计用于高速开关和线性放大应用,适用于高电压运算放大器、开关稳压器、转换器、偏转级和高保真放大器。

7. 封装信息: - 封装类型为TO-66。
2N6420 价格&库存

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