2N6465

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6465 2N6466 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Complement to type 2N6467 2N6468 APPLICATIONS ・For use in audio amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N6465 VCBO Collector-base voltage 2N6466 2N6465 VCEO Collector-emitter voltage 2N6466 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 120 5 4 40 150 -65~150 V A W ℃ ℃ Open emitter 130 100 V CONDITIONS VALUE 110 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 2.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6465 2N6466 MIN TYP. MAX UNIT 2N6465 VCEO(SUS) Collector-emitter sustaining voltage 2N6466 IC=50mA ;IB=0 100 V 120 VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.15A 1.2 V VBE Base-emitter on voltage IC=1.5A ; VCE=4V 1.5 V 2N6465 ICBO Collector cut-off current 2N6466 VCB=110V; IE=0 10 VCB=130V; IE=0 μA 2N6465 ICEO Collector cut-off current 2N6466 VCE= 100V,IB=0 100 VCE= 120V,IB=0 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE DC current gain IC=1.5A ; VCE=4V 15 150 fT Transition frequency IC=0.5A ; VCE=10V 5 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6465 2N6466 Fig.2 outline dimensions 3