2N6467

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6467 2N6468 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Complement to type 2N6465 2N6466 APPLICATIONS ・For use in audio amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N6467 VCBO Collector-base voltage 2N6468 2N6467 VCEO Collector-emitter voltage 2N6468 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -120 -5 -4 40 150 -65~150 V A W ℃ ℃ Open emitter -130 -100 V CONDITIONS VALUE -110 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 2.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6467 2N6468 MIN TYP. MAX UNIT 2N6467 VCEO(SUS) Collector-emitter sustaining voltage 2N6468 IC=-50mA ;IB=0 -100 V -120 VCEsat Collector-emitter saturation voltage IC=-1.5A; IB=-0.15A -1.2 V VBE Base-emitter on voltage IC=-1.5A ; VCE=-4V -1.5 V 2N6467 ICBO Collector cut-off current 2N6468 VCB=-110V; IE=0 -10 VCB=-130V; IE=0 μA 2N6467 ICEO Collector cut-off current 2N6468 VCE= -100V,IB=0 -100 VCE= -120V,IB=0 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE DC current gain IC=-1.5A ; VCE=-4V 15 150 fT Transition frequency IC=-0.5A ; VCE=-10V 5 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6467 2N6468 Fig.2 outline dimensions 3