2N6469

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area ・High gain at high current APPLICATIONS ・General-purpose of switching and linear-amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6469 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -50 -40 -5 -15 -5 125 150 -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.4 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N6469 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ;IB=0 -40 V VCEsat-1 Collector-emitter saturation voltage IC=-5A; IB=-0.5A -1.3 V VCEsat-2 Collector-emitter saturation voltage IC=-15A; IB=-3A -3.5 V VBE Base-emitter on voltage IC=-15A ; VCE=-4V -3.5 V ICEO Collector cut-off current VCE=-20V; IB=0 VCE=-45V; VBE=-1.5V TC=150℃ VEB=-5V; IC=0 1.0 -0.2 -5.0 -5 mA ICEX Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=-5A ; VCE=-4V 20 150 hFE-2 DC current gain IC=-15A ; VCE=-4V 5 fT Transition frequency IC=-0.5A ; VCE=-10V 4 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6469 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3