2N6473

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6473 2N6474 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·General-purpose medium power for switching and amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2N6473 VCBO Collector-base voltage 2N6474 2N6473 VCEO Collector-emitter voltage 2N6474 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 120 5 4 2 40 150 -65~150 V A A W ℃ ℃ Open emitter 130 100 V CONDITIONS VALUE 110 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 3.125 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6473 2N6474 MIN TYP. MAX UNIT 2N6473 VCEO(SUS) Collector-emitter sustaining voltage 2N6474 IC=0.1A ;IB=0 100 V 120 VCEsat-1 Collector-emitter saturation voltage IC=1.5A;IB=0.15A 1.2 V VCEsat-2 Collector-emitter saturation voltage IC=4A;IB=2A 2.5 V VBE-1 Base-emitter on voltage IC=1.5A ; VCE=4V 2.0 V VBE-2 Base-emitter on voltage IC=4A ; VCE=2.5V VCE=100V;VBE=-1.5V TC=100℃ VCE=120V;VBE=-1.5V TC=100℃ VCE=50V;IB=0 3.5 0.1 2.0 V 2N6473 ICEX Collector cut-off current 2N6474 mA 0.1 2.0 2N6473 ICEO Collector cut-off current 2N6474 1.0 VCE=60V;IB=0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=1.5A ; VCE=4V 15 150 hFE-2 DC current gain IC=4A ; VCE=2.5V 2 COB fT Output capacitance IE=0 ; VCB=10V;f=1MHz IC=0.5A ; VCE=4V 4 250 pF Transition frequency MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6473 2N6474 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3