2N6476

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6475 2N6476 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·General-purpose medium power for switching and amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2N6475 VCBO Collector-base voltage 2N6476 2N6475 VCEO Collector-emitter voltage 2N6476 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -120 -5 -4 -2 40 150 -65~150 V A A W ℃ ℃ Open emitter -130 -100 V CONDITIONS VALUE -110 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 3.125 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6475 VCEO(SUS) Collector-emitter sustaining voltage 2N6476 VCEsat-1 VCEsat-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage 2N6475 ICEX Collector cut-off current 2N6476 2N6475 ICEO Collector cut-off current 2N6476 IEBO hFE-1 hFE-2 COB Emitter cut-off current DC current gain DC current gain Output capacitance 2N6475 fT Transition frequency 2N6476 IC=-0.5A ; VCE=-4V VCE=-60V;IB=0 VEB=-5V; IC=0 IC=-1.5A ; VCE=-4V IC=-4A ; VCE=-2.5V IE=0 ; VCB=-10V;f=1MHz IC=-1.5A;IB=-0.15A IC=-4A;IB=-2A IC=-1.5A ; VCE=-4V IC=-4A ; VCE=-2.5V VCE=-100V;VBE=-1.5V TC=100℃ VCE=-120V;VBE=-1.5V TC=100℃ VCE=-50V;IB=0 IC=-0.1A ;IB=0 CONDITIONS 2N6475 2N6476 MIN -100 TYP. MAX UNIT V -120 -1.2 -2.5 -2.0 -3.5 -0.1 -2.0 mA -0.1 -2.0 V V V V -1.0 mA -1.0 15 2 250 4 150 mA pF MHz 5 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6475 2N6476 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3