2N6493

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6493 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain ·DARLINGTON APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 100 70 5 15 100 150 -65~200 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.75 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tm=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N6493 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ;IB=0 70 V VCEsat Collector-emitter saturation voltage IC=10A ;IB=100mA 3 V VBEsat Base-emitter saturation voltage IC=10A ;IB=100mA 4 V VBE Base-emitter on voltage IC=4A ; VCE=4V 2.8 V ICEO Collector cut-off current VCE=50V; IB=0 1.0 mA ICEX Collector cut-off current VCE=100V; VBE(off)=-1.5V 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE-1 DC current gain IC=4A ; VCE=4V 500 hFE-2 DC current gain IC=15A ; VCE=4V 100 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6493 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3