2N6594

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6594 DESCRIPTION ・With TO-3 package ・Complement to type 2N6569 ・Wide area of safe operation APPLICATIONS ・Designed for low voltage amplifier power switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB IE IEM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Emitter current Emitter current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -45 -40 -5 -12 -24 -5 -17 -34 100 200 -65~200 UNIT V V V A A A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat ICEO ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-0.1A ;IB=0 IC=-4A; IB=-0.4A IC=-12A; IB=-2.4A IC=-4A; IB=-0.4A VCE=-40V; IB=0 VCB=-45V; IE=0 VEB=-5V; IC=0 IC=-4A ; VCE=-3V IC=-12A ; VCE=-4V IC=-1.0A ; VCE=-4V;f=0.5MHz 15 5 1.5 MIN -40 TYP. 2N6594 MAX UNIT V -1.5 -4.0 -2.0 -1.0 -1.0 -5.0 200 100 20 V V V mA mA mA MHz Switching times td tr tstg tf Delay time Rise time Storage time Fall time IC=-2A; IB1=-IB2=-0.2A VCC=-30V; tp=25μs; Duty Cycle≤2.0% 0.4 1.5 5.0 1.5 μs μs μs μs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.75 UNIT ℃/W 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6594 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3