2N6666

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -40V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -2.0V(Max)@ IC= -3A ·Complement to Type 2N6386 APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B 2N6666 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-DC Collector Power Dissipation TC=25℃ Collector Power Dissipation Ta=25℃ Junction Temperature Storage Temperature Range VALUE -40 -40 -5 -8 -15 -250 65 UNIT V V V A A mA PC W 2 150 -65~150 ℃ ℃ Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1.92 62.5 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(on)-1 VBE(on)-2 ICEX ICEO IEBO hFE-1 hFE-2 COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation voltage Base-Emitter On Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance CONDITIONS IC= -0.2A, IB= 0 B 2N6666 MIN -40 TYP. MAX UNIT V IC= -3A ,IB= -6mA IC= -8A ,IB= -80mA IC= -3.0A ; VCE= -3V IC= -8.0A ; VCE= -3V VCEV= 40V;VBE(off)=1.5V VCEV= 40V;VBE(off)=1.5V;TC=125℃ VCE= -40V, IB= 0 VEB= -5V; IC= 0 IC= -3.0A ; VCE= -3V IC= -8.0A ; VCE= -3V IE= 0; VCB= -10V,ftest= 1MHz 1000 100 -2.0 -3.0 -2.8 -4.5 0.3 3.0 1 5 V V V V mA mA mA 200 pF isc Website：www.iscsemi.cn