0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
2N6678

2N6678

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2N6678 - Silicon NPN Power Transistors - Inchange Semiconductor Company Limited

  • 数据手册
  • 价格&库存
2N6678 数据手册
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage capability ・Fast switching speeds ・Low saturation voltage APPLICATIONS Designed for high voltage switching applications such as : ・Off-line power supplies ・Converter circuits ・Pulse width modulated regulators PINNING (See Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION 2N6676 2N6677 2N6678 Fig.1 simplified outline (TO-3) and symbol Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N6676 VCBO Collector-base voltage 2N6677 2N6678 2N6676 VCEO Collector-emitter voltage 2N6677 2N6678 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature Tc=25℃ Open collector Open base Open emitter CONDITIONS VALUE 450 550 650 300 350 400 8 15 20 5 175 200 -65~200 V A A A W ℃ ℃ V V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6676 VCEO(SUS) Collector-emitter sustaining voltage 2N6677 2N6678 VCEsat VBEsat ICEV IEBO hFE-1 hFE -2 COB fT Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency IC=15A; IB=3A IC=15A; IB=3A IC=0.2A ; IB=0 2N6676 2N6677 2N6678 CONDITIONS MIN 300 350 400 TYP. MAX UNIT V 1.5 1.5 0.1 1.0 2.0 15 8 500 3 50 V V mA mA VCE=RatedVCEV;VBE(off)=-1.5V TC=100℃ VEB=8V; IC=0 IC=1A ; VCE=5V IC=15A ; VCE=3V IE=0 ;VCB=10V;f=0.1MHz IC=1A ; VCE=10V;f=5.0MHz pF MHz Switching times td tr ts tf Delay time Rise time Storage time Fall time IC=15A; IB1=-IB2=3.0A VCC=200V; tp=20μs; Duty Cycle≤2.0% VBB=6V,RL=1.35Ω 0.2 0.6 2.5 0.6 μs μs μs μs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.0 UNIT ℃/W 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6676 2N6677 2N6678 Fig.2 Outline dimensions 3
2N6678 价格&库存

很抱歉,暂时无法提供与“2N6678”相匹配的价格&库存,您可以联系我们找货

免费人工找货
2N6678
    •  国内价格
    • 1+10.925
    • 10+10.45

    库存:0