2N6686

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6686 DESCRIPTION ・With TO-3 package ・Fast switching speed ・Low collector saturation voltage APPLICATIONS ・Designed for high-power switching circuits applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 260 160 8 25 50 200 200 -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N6686 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 160 V VCEsat Collector-emitter saturation voltage IC=25A; IB=2.5A 1.5 V VBEsat Base-emitter saturation voltage IC=25A; IB=2.5A 1.8 V ICEV Collector cut-off current VCE=260V; VBE=-1.5V 50 μA IEBO Emitter cut-off current VEB=8V; IC=0 100 μA hFE-1 DC current gain IC=1A ; VCE=2V 30 hFE-2 DC current gain IC=10A ; VCE=2V 25 100 hFE-3 DC current gain IC=25A ; VCE=2V 15 fT Transition frequency IC=1A ; VCE=10V 20 100 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6686 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3