2N6740

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High voltage ratings ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Suited for 115 and 220V switchmode applications such as switching regulators, Inverters and DC-DC converters PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2N6738 2N6739 2N6740 Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2N6738 VCBO Collector-base voltage 2N6739 2N6740 2N6738 VCEO Collector-emitter voltage 2N6739 2N6740 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 450 550 650 300 350 400 8 8 10 4 100 150 -65~150 V A A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.25 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6738 2N6739 2N6740 CONDITIONS MIN TYP. MAX UNIT 2N6738 Collector-emitter sustaining voltage 300 VCEO(SUS) 2N6739 IC=0.2A ;IB=0 350 V 2N6740 400 VCEsat-1 Collector-emitter saturation voltage IC=5A;IB=1A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=8A;IB=4A 2.0 V VBEsat Base-emitter saturation voltage IC=5A;IB=1A VCEV=Rated VCEV;VBE=-1.5V TC=100℃ VEB=8V; IC=0 1.6 0.1 1.0 2.0 V ICEV Collector cut-off current mA IEBO Emitter cut-off current mA hFE DC current gain IC=5A ; VCE=3V 10 40 fT Transition frequency IC=0.2A ; VCE=10V 10 60 MHz Switching times μs μs μs μs td Delay time 0.1 tr Rise time IC=5A;IB1=-IB2=1A VCC=125V tp=20μs,Duty cycle≤1.0% 0.4 ts Storage time 2.5 tf Fall time 0.5 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6738 2N6739 2N6740 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3